R6011ENXC7
Manufacturer:
Rohm Semiconductor
Mfr.Part #:
R6011ENXC7
Datasheet:
Description:
MOSFETs TO-220FM Through Hole N-Channel number of channels:1 53 W 600 V Continuous Drain Current (ID):11 A 32 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 155 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 53 W |
| Number of Channels | 1 |
| Input capacitance | 670 pF |
| Continuous Drain Current (ID) | 11 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 32 nC |
| Drain to Source Resistance | 390 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 4 V |
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